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| BSS 295 SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * Logic Level * VGS(th) = 0.8...2.0V Pin 1 G Type BSS 295 Type BSS 295 BSS 295 Pin 2 D Marking SS 295 Pin 3 S VDS 50 V ID 1.4 A RDS(on) 0.3 Package TO-92 Ordering Code Q67000-S238 Q67000-S105 Tape and Reel Information E6288 E6325 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 50 50 Unit V VDS V DGR RGS = 20 k Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current VGS Vgs ID 14 20 A 1.4 TA = 24 C DC drain current, pulsed IDpuls 5.6 TA = 25 C Power dissipation Ptot 1 W TA = 25 C Semiconductor Group 1 12/05/1997 BSS 295 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 125 E 55 / 150 / 56 K/W Unit C Tj Tstg RthJA Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 1.4 0.1 8 10 0.25 0.45 2 1 50 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS A nA nA 0.3 0.5 VDS = 50 V, VGS = 0 V, Tj = 25 C VDS = 50 V, VGS = 0 V, Tj = 125 C VDS = 30 V, VGS = 0 V, Tj = 25 C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 1.4 A VGS = 4.5 V, ID = 1.4 A Semiconductor Group 2 12/05/1997 BSS 295 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.5 1.6 320 110 50 - S pF 425 170 75 ns 8 12 VDS 2 * ID * RDS(on)max, ID = 1.4 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Rise time tr 20 30 VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Turn-off delay time td(off) 120 160 VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Fall time tf 85 115 VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Semiconductor Group 3 12/05/1997 BSS 295 Electrical Characteristics, at Tj = 25C, unless otherwise specified Symbol Values Parameter min. Reverse Diode Inverse diode continuous forward current IS typ. max. Unit A 1 1.4 5.6 V 1.5 TA = 25 C Inverse diode direct current,pulsed ISM - TA = 25 C Inverse diode forward voltage VSD VGS = 0 V, IF = 2.8 A Semiconductor Group 4 12/05/1997 BSS 295 Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 10 V 1.5 A 1.3 1.2 W 1.0 Ptot 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 C 160 ID 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C Drain-source breakdown voltage V(BR)DSS = (Tj) 60 V 58 V(BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 C 160 Tj Semiconductor Group 5 12/05/1997 BSS 295 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 3.2 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.9 a b c Ptot = 1W k ljih gf e VGS [V] a 2.0 A RDS (on) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VGS [V] = a 2.0 2.5 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 6.0 h i 7.0 8.0 j 9.0 k 10.0 ID 2.4 db c 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 2.0 d e f 1.6 g c h i d f e 1.2 j k hg j ik 0.8 b l 0.4 a 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.0 0.0 0.4 0.8 1.2 1.6 2.0 A 2.8 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s VDS 2 x ID x RDS(on)max 4.5 A Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s, VDS2 x ID x RDS(on)max 2.2 S ID 3.5 3.0 gfs 1.8 1.6 1.4 2.5 2.0 1.5 1.0 1.2 1.0 0.8 0.6 0.4 0.5 0.0 0 1 2 3 4 5 6 7 8 V 10 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 A ID 4.0 VGS Semiconductor Group 6 12/05/1997 BSS 295 Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 1.4 A, VGS = 10 V 0.75 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 0.65 RDS (on)0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60 VGS(th) 3.6 3.2 2.8 98% typ 2.4 98% 2.0 1.6 1.2 typ 2% 0.8 0.4 -20 20 60 100 C 160 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s 10 1 pF C 10 2 Ciss A IF 10 0 Coss Crss 10 1 10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 10 -2 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 12/05/1997 |
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